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Speciation of aluminium in silicon carbide by electrothermal

(ETV-ICP-AES) method was developed for rapid determination of binder and lattice phase aluminium in liquid-phase sintered silicon carbide (LPS-SiC)

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reaction-bonded silicon carbide

Reaction-bonded silicon carbide is produced by mixing SiC powder with powdered carbon and a plasticizer, forming the mixture into the desired shape, burning

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- Atmosphere effects in the processing of silicon carbide

P. Colombo; T. E. Paulson; C. G. Pantano, 1994: Atmosphere effects in the processing of silicon carbide and silicon oxycarbide thin films and coatin

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In situ production of silicon carbide reinforced ceramic composites Download PDF InfoPublication numberUS5011799AUS5011799A US07/582,388 US58238890A US

Get PDF - Epitaxial growth of silicon carbide layers by

Dr. Yu. A. Vodakov; E. N. Mokhov; M. G. Ramm; A. D. Roenkov, 1979: Epitaxial growth of silicon carbide layers by sublimation sandwich method

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I: Application to adsorption in silicon-carbide membranes

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Trends in dopant incorporation for 3C-SiC thin films on silicon. Proceedings of the 6th European Conference on Silicon Carbide and Related Materials. EC

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Understanding the Chemistry in Silicon Carbide Chemical Vapor

Understanding the chemistry in CVD of SiC is important to be able to control, improve and scale up the process to become industrially competitive. A

Silicon Carbide 2006--Materials, Processing and Devices:

Silicon Carbide 2006--Materials, Processing and Devices: Symposium Held April 18-20, 2006, San Francisco, California, U.S.A

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autoclave made of semiconducting silicon carbide ceramic

Obermayer, D.; Damm, M.; Kappe, C.Oliver., 2013: Simulating microwave chemistry in a resistance-heated autoclave made of semiconducting silicon carbide

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