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Large Dielectric Constant and High Thermal Conductivity in

20111018-Large Dielectric Constant and High Thermal Conductivity in Poly(vinylidene fluoride)/Barium Titanate/Silicon Carbide Three-Phase Nanocomposi

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Silicon carbide semiconductor devices and methods of fabricating silicon carbide semiconductor devices are provided by successively etching a mask layer to

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by Holey Silicon and the Role of Thermal Conductivity

Author(s): Ren, Zongqing | Advisor(s): Lee, Jaeho | Abstract: While thermal management of nanoscale electronics is becoming more challenging, recent

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A silicon nitride substrate including silicon nitride crystal grains and a grain boundary phase and having a thermal conductivity of 50 W/m·K or more,

US20040238946A1 - Heat spreader and semiconductor device and

high thermal conductivity across the plane and thickness; sufficient strengthceramic particles may be at least one of silicon carbide and aluminum

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Minimizing conductive heat losses in Micro-Electro-Mechanical-Systems (MEMS) thermal (hot-film) flow sensors is the key to minimize the sensors’

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SILICON NITRIDE CIRCUIT BOARD AND ELECTRONIC COMPONENT MODULE

6. The silicon nitride circuit board according to claim 1, wherein the silicon nitride substrate has a thermal conductivity of 50 W/m·K or higher

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Abstract: In this work, we investigated tensile and compression forces effect on the thermal conductivity of silicon. We used equilibrium molecular dynamics

temperature dependence of thermal conductivity of silicon

Phonon surface scattering controlled length dependence of thermal conductivity of silicon nanowires. Physical Chemistry Chemical Physics 15(35): 14647-14652,

dependences of thermal conductivity for silicon nanowires

Kuleyev, I. G.; Kuleyev, I. I.; Bakharev, S. M., 2014: Anisotropy and temperature dependences of thermal conductivity for silicon nanowires Temp

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