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Graphene Additions on Polishing of Silicon Carbide Wafer

Effect of Graphene Additions on Polishing of Silicon Carbide Wafer with Functional PU/Silica Particles in CMP slurry Hsien-Kuang Liu, Chao-Chang A

SILICON CARBIDE WAFER AND POSITIONING EDGE PROCESSING METHOD

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Semiconductor devices useful in high temperature sensing applications include a silicon carbide substrate, a silicon dioxide layer, and an outer layer of

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during CMP Process on 4H-SiC Wafer Using Electron Microscopy

The dislocation analysis of latent scratch induced chemical mechanical polishing process on 4H-silicon carbide (SiC) using the multi directional scanning

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US7998866B2 - Silicon carbide polishing method utilizing

The inventive method comprises chemically-mechanically polishing a substrate comprising at least one layer of silicon carbide with a polishing composition

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