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Schottky-gate Bipolar Mode Field Effect Transistor (SiC

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2010731- About | Contact COMPUTERSCYBERUNMANNEDSENSORSRF/ANALOGPOWERCOMMUNICATIONSTEST Home About Us Advertise Article Archives Contact Us Jobs

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【PDF】GA10SICP12-247

  Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features  IG = 200 mA, Tj = 25 °C ID = 10 A, IG = 400 mA, Tj = 125

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A Process Design Kit (PDK) has been developed to realize complex integrated circuits in Silicon Carbide (SiC) bipolar low-power technology. The PDK

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